The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1981
Filed:
Apr. 09, 1979
Julius Hyman, Jr, Los Angeles, CA (US);
Hughes Aircraft Company, Culver City, CA (US);
Abstract
Ion chamber 20 receives electrons from cathode 28 and produces ions by electron bombardment in discharge plasma chamber 20. Ions are extracted through ion optics including screen 22 and accelerator electrode 24. Higher ion densities in the center of the discharge chamber are reduced by spoiler 42 which is operated at a potential between cathode and anode potential. This reduces double ionization and central peaking to provide a more uniform ion beam through the optics. By employing laterally positioned spoiler elements beam steering can be accomplished. The ion source is useful wherever a uniform beam profile is desirable as in ion implantation. Controlling the direction of beam density is useful in ion machining and in ion thrusters for space application.