The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1981
Filed:
Oct. 01, 1979
Applicant:
Inventors:
Moiz M Beguwala, Placentia, CA (US);
Francis M Erdmann, Anaheim, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ; B05D / ; H01L / ;
U.S. Cl.
CPC ...
204164 ; 148-15 ; 204177 ; 423344 ; 427 531 ; 427 94 ;
Abstract
A process for the direct thermal nitridation of silicon semiconductor devices in which the semiconductor body is placed in an atmosphere of N.sub.2, at a temperature of less than 1000.degree. C. The N.sub.2 is activated by an RF electrical field which ionizes the nitrogen, which then combines with the silicon surface.