The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1981
Filed:
Oct. 10, 1979
John M Keen, Hanley Swan, GB;
Arthur F Willoughby, Eastleigh, GB;
Abstract
In a method of fabricating semiconductor devices, eg infra-red charge coupled devices (IRCCDs), the invention relates to the provision of a region containing a first species of ionized dopant with a body of semiconductor material in which the device is being fabricated, in which diffusion of this ionized dopant creates an internal electric field which provides a barrier against the penetration of a second relatively faster-diffusing species of ionized dopant into a selected region of the semiconductor body. In the method described in its application to the fabrication of a monolithic IRCCD, the second species of ionized dopant is introduced into detector regions of the body of semiconductor material to render them sensitive to infra-red radiation, and the barrier provided by diffusion of the first species of the ionized dopant serves to prevent the penetration of the second dopant species into the active charge storage and transfer channels of the CCD.