The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1981
Filed:
Aug. 31, 1979
Guenther Meusburger, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A CCD arrangement which includes a semiconductor layer of a first conductivity type, a layer of insulating material on the semiconductor layer, a row of shift electrodes on the insulating layer. The row of shift electrodes on the insulating layer are fed with pulse train voltages displaced in phase relative to one another. The charges are fed to an output end diffusion zone of the opposite conductivity type which has previously been brought to a reference potential and then released from the latter producing a state which is not bound in potential to the exterior. One of the shift electrodes is connected via a terminal to a transistor switch which intermittently supplies the assigned pulse train voltage, and to the gate of a field effect capacitor whose counter electrode is fed with a periodic pulse voltage. The rising flanks of this pulse voltage are each delayed relative to the times at which the assigned pulse train voltage is interrupted. The terminal of the aforesaid one shift electrode is connected to the gate of a field effect capacitor which serves as a signal output.