The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1981
Filed:
Aug. 29, 1979
Applicant:
Inventors:
Kazunari Shirai, Yokohama, JP;
Izumi Tanaka, Yokohama, JP;
Shinpei Tanaka, Yokohama, JP;
Keiji Nishimoto, Yokohama, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 148-15 ; 148187 ; 357 52 ;
Abstract
In a method of smoothing the edges of a window through a PSG film of a semiconductor device, a masking film is provided under the PSG film, so as to prevent impurities of the PSG film from penetrating into semiconductor substrate during the heating of the PSG film for the smoothing of the edges. A masking film, for example, an Si.sub.3 N.sub.4 film, does not, however, inhibit the penetration of hydrogen gas, which can improve the properties of an MIS semiconductor device.