The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1981
Filed:
Mar. 14, 1980
Yoshihiro Hamakawa, Kawanishi-shi, Hyogo-ken, JP;
Hiroaki Okamoto, Kobe, JP;
Yoshiteru Nitta, Osaka, JP;
Toshio Adachi, Toyonaka, JP;
Other;
Abstract
A photovoltaic device including a plurality of amorphous silicon unit cells each having a p-i-n structure layered in succession on a substrate made of stainless steel. A transparent electrically conductive layer, for withdrawing a photoelectromotive force in cooperation with the electrically conductive substrate, is formed on the uppermost unit cell, so that rays of light may be incident upon the photovoltaic device from the uppermost unit cell. Preferably, the thickness of the unit cells closer to the light incidence surface is selected to be less than the thickness of the unit cells farther from the light incident surface. Each of the unit cells is structured such that the n type, i type and p type layers are disposed in the above described order from the light incidence surface in terms of the impurity type.