The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1981
Filed:
Apr. 28, 1980
Applicant:
Inventors:
Joseph L Schmit, Hopkins, MN (US);
M Walter Scott, Minnetonka, MN (US);
Assignee:
Honeywell Inc., Minneapolis, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156605 ; 156 64 ;
Abstract
A method of growing single crystals of silicon doped with thallium for use as an extrinsic silicon photodetector of 3-5 um infrared radiation which will operate above 77 K.
Schmit, Joseph. (1981). Growth of thallium-doped silicon from a tin-thallium solution (U.S. Patent No. 4270973). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4270973
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile