The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1981
Filed:
Nov. 13, 1978
Applicant:
Inventors:
Michael T Elliott, Cypress, CA (US);
Michael R Splinter, Silverado, CA (US);
Addison B Jones, Yorba Linda, CA (US);
John P Reekstin, Orange, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29580 ; 357 59 ;
Abstract
Semiconductor devices with gate dimensions as small as 0.25 microns square have been fabricated using electron beam lithography and dry processing techniques. In particular, silicon gate, N-channel, metal-oxide-semiconductor (NMOS) field-effect-transistors (FET) have been produced. The devices and the process are especially adapted to bulk silicon based transistors.