The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1981
Filed:
Dec. 18, 1978
Applicant:
Inventor:
Tsukasa Tada, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
430270 ; 430296 ;
Abstract
A method of patterning a radiation-sensitive resist layer for manufacture of a semiconductor element which uses a radiation-sensitive resist layer formed of at least one of the radiation sensitive materials whose compositions are expressed by any of the following general structural formulas: ##STR1## wherein: R.sub.1 =methyl group, halogenated methyl group, cyano group or halogen element
Tada, Tsukasa. (1981). Method of patterning a resist layer for manufacture of a semiconductor (U.S. Patent No. 4268607). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4268607
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile