The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1981
Filed:
Aug. 01, 1966
David F Allison, Palo Alto, CA (US);
David A Maxwell, San Jose, CA (US);
Signetics Corporation, Sunnyvale, CA (US);
Abstract
1. In a method for forming a semiconductor structure utilizing a semiconductor body, forming a grid structure in the semiconductor body, forming a support structure upon the grid structure, removing only a portion of the semiconductor body to provide a semiconductor body which has a substantially uniform thickness in the vicinity of the grid structure and in which the grid structure does not intercept the exposed surface of the semiconductor body, and forming additional grid structure in the semiconductor body joining the first named grid structure so that islands of semiconductor material are formed in the semiconductor body which are isolated from each other and from the support structure. 23. In a method for forming a semiconductor structure utilizing a semiconductor body having a surface, forming a layer of insulating material on the surface of the semiconductor body, forming a recessed grid in the layer of insulating material and extending into the semiconductor body, forming a layer of insulating material on the recessed grid adhering to said surface and having a depth which is insufficient to fill the recessed grid to form a grid structure in a semiconductor body prior to the formation of a semiconductor device in the semiconductor body, forming a support structure upon the grid structure, removing a portion of the semiconductor body and diffusing isolation fences into the semiconductor body which extend and make contact with the layer of insulating material to form a plurality of islands of semiconductor material isolated from each other and from the support structure.