The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1981
Filed:
May. 18, 1979
Applicant:
Inventors:
Takashi Ito, Kawasaki, JP;
Shinpei Hijiya, Sagamihara, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 29578 ; 148187 ; 357 23 ; 357 54 ; 357 91 ; 427 94 ; 4272551 ; 4272554 ;
Abstract
Impurity ions implanted into a semiconductor silicon substrate are not redistributed during a heating of the substrate from the substrate to the film. Such redistribution does not occur due to the direct nitridation of the silicon substrate for forming the silicon nitride film.
Quick Actions:
Ito, Takashi. (1981). Process for producing a semiconductor device including an ion (U.S. Patent No. 4266985). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4266985
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile