The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 1981

Filed:

Mar. 14, 1979
Applicant:
Inventors:

Schoen-nan Chen, North Brunswick, NJ (US);

Michael A Russak, Farmingdale, NY (US);

Horst Witzke, Princeton, NJ (US);

Joseph Reichman, Great Neck, NY (US);

Satyendra K Deb, East Brunswick, NJ (US);

Assignees:

Grumman Aerospace, Bethpage, NY (US);

Refac Electronics, Barkhamsted, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M / ; H01M / ;
U.S. Cl.
CPC ...
296232 ; 296231 ;
Abstract

Photoelectrochemical cell structures and methods of fabrication are disclosed which provide for easily manufactured efficient energy conversion devices. The structures incorporate one or more chambers for the electrolyte, and utilize semiconductor photoelectrodes. In the plural chamber structure, the semiconductor may be opaque, and need not necessarily be a thin film. Specific dopants for the semiconductor provide for decreased dark current and increased open circuit voltage. Post deposition treatment is disclosed for the semiconductor to provide an increased shorting current. Increased sputtering wattage is provided to increase the short circuit current available from the cell. An electrolyte composition is described having improved performance at high light intensity.


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