The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1981
Filed:
Nov. 28, 1979
Applicant:
Inventor:
Masatoshi Seki, Tachikawa, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148174 ; 29571 ; 2957 / ; 148-15 ; 148175 ; 148187 ; 156653 ; 156657 ; 357 23 ; 357 41 ; 357 51 ; 357 59 ; 427 85 ; 427 86 ;
Abstract
The present invention deals with a method of taking out a substrate electrode of a LOCOS-type silicon gate MOSIC device from the surface of the semiconductor substrate. According to the present invention, a masking layer for preventing the introduction of impurities is formed on the periphery of the semiconductor substrate simultaneously with the masking step for forming a resistor of polycrystalline silicon, the mask is removed after the impurities have been introduced, and a substrate electrode is formed on the exposed surface of the semiconductor substrate.