The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1981
Filed:
Aug. 23, 1979
Applicant:
Inventors:
John A Ostop, Jeannette, PA (US);
Robert W Marks, Mt. Pleasant, PA (US);
Assignee:
Westinghouse Electric Corp., Pittsburgh, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148188 ; 148189 ; 148190 ;
Abstract
A method for doping a wafer of n-type seimiconductor material having two surfaces includes the steps of applying a boron solution to a first surface of the wafer and heating the wafer to drive the boron into the semiconductor wafer for forming a first p-type region. Both surfaces of the wafer are then exposed to a gallium vapor for forming a second p-type region on the second surface and deepening the extent of the first p-type region.
Ostop, John. (1981). Technique for making asymmetric thyristors (U.S. Patent No. 4264383). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4264383
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile