The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1981
Filed:
Oct. 12, 1979
Narasipur G Anantha, Hopewell Junction, NY (US);
Harsaran S Bhatia, Wappingers Falls, NY (US);
Santosh P Caur, Wappingers Falls, NY (US);
Hans B Pogge, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for making lateral PNP or NPN devices in isolated monocrystalline silicon pockets wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline region. The P emitter or N emitter diffusion is made over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket. This structure reduces the vertical current injection which will give relatively high (beta) gain even at low base to emitter voltages. The lateral PNP or NPN device resulting from the method is in a monocrystalline silicon pocket wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline silicon region. The P emitter or N emitter diffusion is located over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket.