The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 1981

Filed:

Jul. 11, 1979
Applicant:
Inventor:

James S Congdon, Santa Clara, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ; H03F / ;
U.S. Cl.
CPC ...
330265 ; 330255 ;
Abstract

A high power integrated circuit amplifier employs emitter ballasted NPN output transistors. One output transistor is driven by a PNP transistor to create a composite pair. Since the ballast resistor, in the composite pair, is effectively in the collector of a PNP equivalent transistor, the output stage creates substantial distortion. The output stage is driven by a conventional high gain capacitance compensated amplifier. By connecting an additional negative feedback capacitor between the emitter of the composite pair output transistor and the driver amplifier input, the distortion can be effectively compensated without resorting to power dissipative distortion reduction.


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