The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1981
Filed:
Mar. 24, 1980
Applicant:
Inventors:
Cheng-Chi Wang, Thousand Oaks, CA (US);
August H Vanderwyck, Newbury Park, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 148172 ;
Abstract
A semi-open method for growing an epitaxial layer on a substrate by increasing the pressure, refluxing the volatile components, contacting the substrate with the melt solution, and reducing the solution temperature.