The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1981
Filed:
Mar. 13, 1980
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 148172 ; 148173 ; 118415 ;
Abstract
A process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy wherein, in order to avoid bead-growth on a substrate, at least the lower region of an epitaxy solution chamber is clad with a substrate material so as to displace the location of the bead growth away from the actual substrate and toward the region of the cladding. This process is useful for producing GaAs-(Ga, Al) As and (Ga, In) (As, P) mixed crystal layers for luminescent diodes and laser diodes.