The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1981
Filed:
May. 07, 1979
U.S. Philips Corporation, New York, NY (US);
Abstract
In a method of implanting ions in a target, an ion beam is directed onto the target by means of an electrostatic deflection system where the beam describes a pattern over the target dependent on voltage variations on two mutually perpendicular sets of deflection plates. One of the sets of deflection plates is subjected to a varying voltage difference and the other set of deflection plates is subjected to a constant voltage difference so that the ion beam describes a straight line on the target, while at the end of the beam stroke a fixed voltage difference is superimposed on the plates having a constant voltage difference and the variation in the voltage difference is reversed in the plates having a varying voltage difference in such manner that lines described consecutively by the ion beam are always parallel and are situated at a fixed distance from each other.