The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1981
Filed:
Aug. 24, 1977
Applicant:
Inventors:
Alfred C Ipri, Princeton, NJ (US);
Doris W Flatley, Belle Mead, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 357 59 ;
Abstract
The radiation resistance of an MOS transistor is improved by making the transistor in a manner such that, after the gate insulation layer is formed, all further steps are carried out at a relatively low temperature, i.e., less than about 900.degree. C. The source and drain regions are preferably formed by ion implantation with very little or no post implant thermal activation, and the metallization is applied by low temperature techniques.