The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1981
Filed:
Feb. 14, 1979
Applicant:
Inventor:
Bernard P Roger, Carpiquet, FR;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 51 ; 357 34 ; 357 36 ; 357 88 ;
Abstract
A bipolar transistor includes an integrated resistive emitter zone of closed geometric configuration which divides the emitter region of the transistor into two sub-regions. The integrated resistive emitter zone serves to improve the secondary breakdown characteristics of the transistor, so that transistors in accordance with the invention are particularly suited for use in power transistors.