The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1981
Filed:
Sep. 24, 1979
Tomoyuki Watanabe, Kodaira, JP;
Takahiro Okabe, Hinodemachi, JP;
Minoru Nagata, Kodaira, JP;
Tohru Nakamura, Hoya, JP;
Kenji Kaneko, Hachioji, JP;
Yutaka Okada, Kokubunji, JP;
Norio Anzai, Tokorozawa, JP;
Takanori Nishimura, Mitaka, JP;
Takashi Agatsuma, Kodaira, JP;
Hitachi, Ltd., , JP;
Abstract
A semiconductor IC device in which an N-type semiconductor layer is formed in a P-type semiconductor substrate; the N-type layer is divided by a P.sup.+ -type insulation region into plural island regions; and an IIL is formed in a first island region while an NPN transistor is formed in a second island region, wherein an N-type up-diffused layer is formed from the bottom of the first island region up while an N-type well region is formed from the surface of the first island region down, and N.sup.+ -type buried layers are formed near the bottoms of the first and the second island region.