The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1981
Filed:
Dec. 19, 1978
Nippon Electric Co., Ltd., Tokyo, JP;
Abstract
A constant voltage generator capable of generating a constant voltage having a fixed temperature coefficient regardless of manufacturing errors is disclosed. The constant voltage generator comprises a transistor construction having a forwardly biased PN-junction, a Zener diode connected in series to an electrical path between the emitter and a collector of the transistor construction, a first resistor connected between a base and the emitter of the transistor construction, and a second resistor connected between the base and the collector of the transistor construction. The transistor construction, the Zener diode and the first and second resistors are all formed in a common semiconductor substrate, the first resistor being composed of a region of one conductivity type and the second resistor being composed of a pinch resistor formed in the substrate. The transistor and Zener diode may be composed of a first semiconductor region of one conductivity type, a second region of the other conductivity type formed in the first semiconductor region and a third region of the one conductivity type being formed in the second region. The first region may be composed of a fourth region of the other conductivity type formed in the first semiconductor region, and the second resistor may be composed of a fifth region of the other conductivity type formed in the first semiconductor region and operable as a resistive region and a sixth region of the one conductivity type covering a part of the fifth region.