The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1981
Filed:
Jul. 18, 1979
Ulrich Schwabe, Vaterstetten, DE;
Erwin Jacobs, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
An integrated multi-layer insulator memory cell is produced via silicon-gate technology, with self-adjusting, overlapping polysilicon contact wherein a gate oxide of a peripheral transistor is produced after the application of multi-layer insulating layer comprised of a storage layer and a 'blocking' layer. The 'blocking' layer consists of an oxynitride layer formed by oxidation of a silicon nitride layer surface or an additionally applied SiO.sub.2 layer and has a layer thickness of about 5 to 30 nm. Such 'blocking' layer prevents an undesired injection of charge carriers from the silicon-gate electrode. It also provides means for forming a self-adjusting, overlapping polysilicon contact.