The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1981
Filed:
Mar. 09, 1979
Douglas E Houston, Ballston Lake, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A method is provided for thermo-compression diffusion bonding first and second structured copper strain buffers, respectively, directly to the two opposed surfaces of a substrateless semiconductor device wafer. The expensive tungsten or molybdenum support plate conventionally used to provide structural integrity to the relatively fragile semiconductor device wafer is thus eliminated. The method includes sandwiching the semiconductor device wafer between copper strand type strain buffers each having a lateral extent greater than the lateral extent of the wafer, diffusion bonding the strain buffers to the semiconductor device via first and second metallic coating layers, and removing most of the overhanging portions of the buffer which are not bonded to the wafer. A step of etching and passivating the edges of the wafer is also disclosed.