The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1981
Filed:
Dec. 20, 1979
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Kodama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148171 ; 148-15 ; 148172 ; 156662 ; 252 792 ;
Abstract
A method of treating semiconductor substrate comprising the step of after epitaxial growth of III-V compound semiconductor layers on a substrate by a liquid phase epitaxial growth method using gallium as solvent, the substrate is treated by an etchant comprising phosphoric acid, acetic acid and nitric acid thereby selectively removing residue stains of gallium on the surface of the substrate.