The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1981
Filed:
Jul. 26, 1977
Applicant:
Inventors:
Assignee:
Nippon Gakki Seizo Kabushiki Kaisha, Hamamatsu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H03K / ;
U.S. Cl.
CPC ...
307446 ; 357 22 ; 357 23 ; 357 43 ; 357 92 ; 307459 ;
Abstract
In an integrated injection logic (IIL) type semiconductor integrated circuit, an injector transistor is formed with a field effect transistor (FET) and an inverter transistor is formed with a bipolar transistor (BPT). The drain region of the FET is merged into the base region of the BPT. The base of the BPT constitutes a logic input and the collector of the BPT constitutes a logic output. The FET may be either of the junction type or of the insulated gate type. The carrier injection efficiency can be improved to approximately unity over a wide range of the injection current.