The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1981
Filed:
Aug. 16, 1979
Bernard M Kemlage, Kingston, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A chemical vapor deposition process wherein a silicon nitride barrier layer greater than about 50 Angstroms in thickness is formed over a silicon substrate and a low pressure chemical vapor deposition of a chlorosilane and a nitrous oxide oxidizing gas is used to form a silicon dioxide layer over the silicon nitride layer, where the silicon dioxide layer has a thickness between 2500 and 100,000 Angstroms. This process overcomes the problem of the low pressure chemical vapor deposition of silicon dioxide that does not use the silicon nitride layer. The problem is degradation of the silicon dioxide layer during subsequent oxidation cycles.