The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 1981
Filed:
Oct. 01, 1979
Narasipur G Anantha, Hopewell Junction, NY (US);
Joseph R Cavaliere, Hopewell Junction, NY (US);
Richard R Konian, Poughkeepsie, NY (US);
Gurumakonda R Srinivasan, Poughkeepsie, NY (US);
Herbert I Stoller, Wappingers, NY (US);
James L Walsh, Hyde Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for making a bipolar filamentary pedestal transistor having reduced base-collector capacitance attributable to the elimination of the extrinsic base-collector junction. Silicon is deposited upon a coplanar oxide-silicon surface in which only the top silicon surface of the buried collector pedestal is exposed through the oxide. Epitaxial silicon deposits only over the exposed pedestal surface while polycrystalline silicon deposits over the oxide surface. The polycrystalline silicon is etched away except in the base region. An emitter is formed in the base region and contacts are made to the emitter, base and collector regions.