The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1981
Filed:
Aug. 31, 1979
Applicant:
Inventors:
Junichi Mogi, Kawasaki, JP;
Kiyoshi Miyasaka, Yokohama, JP;
Assignee:
Fujitsu Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 41 ; 357 23 ; 357 55 ;
Abstract
A semiconductor device has VMOS transistors and VMOS dynamic memory cells which are formed on the same semiconductor substrate of a first conductivity type. A buried layer of the opposite conductivity type is formed between the substrate and an epitaxial layer having V-grooves for the VMOS dynamic memory cells. In the buried layer are formed buried layers of the first conductivity type serving as sources and capacitors for the VMOS dynamic memory cells.