The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1981
Filed:
May. 09, 1979
David W Oliver, Schenectady, NY (US);
Casmir R Trzaskos, Amsterdam, NY (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
The variety of technologies that have been applied in the development of a onded grid cathode are described. These include chemical vapor deposition of tungsten, molybdenum, iridium, BM, and Si.sub.3 N.sub.4 on both sides of a sintered tungsten cathode disk. Zirconium and titanium getters have been used to eliminate nitrogen evolution problems. Films of Si.sub.3 N.sub.4 have been added to the insulation to prevent calcium and barium diffusion into the layer and maintain adequate resistivity and breakdown strength. Plasma etching was introduced as a method of removing Si.sub.3 N.sub.4 from the cathode pores.