The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1981
Filed:
Dec. 28, 1979
James A Davis, Glen Ellyn, IL (US);
William F MacPherson, Winfield Township, DuPage County, IL (US);
Peter W Shackle, Bridgewater, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
To switch a first gated diode switch (GDS) to the 'OFF' state requires a voltage applied to the gate which is more positive than that of the anode or cathode and the sourcing of current into the gate which is of the same order of magnitude as flows between the anode and cathode. Control circuitry, which uses a second GDS coupled by the cathode to the gate of the first GDS, is used to control the state of the first GDS. The state of the second GDS is controlled by a branch circuit having a relatively modest current handling capability. An n-p-n junction transistor has the emitter and collector coupled to the cathode and gate, respectively, of the first GDS, and has the base coupled through a p-n-p transistor to the input terminal of the control circuitry. The n-p-n transistor facilitates a quick turn-on of the first GDS by rapidly bringing the potentials of the gate and cathode of the first GDS to levels which are close together.