The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1981
Filed:
Nov. 29, 1974
Prosenjit Rai-Choudhury, Murrysville, PA (US);
Dieter K Schroder, Pittsburgh, PA (US);
Westinghouse Electric Corp., Pittsburgh, PA (US);
Abstract
A semiconductor device such as a film or hybrid integrated circuit is provided having a relatively lightly doped, epitaxially grown silicon layer with a relatively long minority carrier lifetime. The lightly doped silicon layer of less than about 1.times.10.sup.17 per cm.sup.3 is grown on a heavily doped silicon layer of greater than about 1.times.10.sup.19 and preferably greater than about 1.times.10.sup.20 per cm.sup.3 formed with phosphorus or boron impurity. The heavily doped silicon layer is preferably formed, either in a semiconductor body or an epitaxial layer on an insulator substrate, preferably by diffusing the impurity into the body or epitaxial layer. Preferably, the semiconductor device is a thin-film device and most desirably a silicon-on-sapphire device.