The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1981
Filed:
Jun. 12, 1979
Akio Shimano, Takatsuki, JP;
Hiromitsu Takagi, Muko, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
An epitaxial layer having a specified conductivity type formed on a semiinsulative or high resistivity semiconductor substrate or insulative substrate is anodized (anodically oxidized) by a predetermined D.C. current under an illumination of light of a predetermined intensity, thereby a depletion layer is formed beneath an oxide layer, which is formed by the anodizing, and the anodizing ceases in areas where the bottom face of the depletion layer reaches the semiinsulative or high resistivity semiconductor substrate or insulative substrate thus retaining a layer of highly uniform thickness layer of the epitaxial grown layer on the substrate.