The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1981
Filed:
Feb. 14, 1979
Jan Lohstroh, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A photosensitive element and a photosensitive device arrangement using the element include a charge transfer structure having an electrode layer extending over a photosensitive area of a semiconductor body. In operation, a bias potential is applied to the electrode layer to form a depletion layer in the underlying body portion, and a drift field is produced in the depletion layer which extends in the direction of an edge portion of the electrode layer to permit photogenerated charge carriers to be transmitted towards the edge portion. A preferred structure for producing the desired drift field includes a resistive electrode having first and second connections for applying a potential difference along the resistive electrode. The photosensitive device arrangement further includes a localized charge-storage zone adjacent the edge portion of the electrode layer for collecting the photogenerated charge carriers and a detector circuit for measuring the charge state of the charge-storage zone.