The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 1981

Filed:

Jun. 18, 1979
Applicant:
Inventor:

Samuel S Shinozaki, Livonia, MI (US);

Assignee:

Ford Motor Company, Dearborn, MI (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
264 56 ; 106 44 ; 264 66 ;
Abstract

A method of forming a silicon carbide ceramic material without forming large areas of a feathered alpha silicon carbide microstructure is disclosed. Basically, the method involves heating the silicon carbide material to a temperature in a range from about 1850.degree. C. to about 1920.degree. C., preferably about 1900.degree. C., and maintaining the material at the selected temperature for a period of time from about 6 hours to about 12 hours. Such a heating cycle produces silicon carbide ceramic material which does not have large areas of a feathered alpha silicon carbide microstructure therein.


Find Patent Forward Citations

Quick Actions:

Shinozaki, Samuel. (1981). Pressureless method of forming a silicon carbide ceramic material (U.S. Patent No. 4244902). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4244902

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…