The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1981
Filed:
Aug. 01, 1979
Applicant:
Inventors:
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136255 ; 136258 ; 357 15 ; 357 30 ;
Abstract
A basic photovoltaic stack is constituted by a semiconducting layer interposed between a layer forming an ohmic contact and a layer forming a Schottky contact. A second photovoltaic stack having the same structure as the basic stack is formed on this latter and includes one of the layers forming an ohmic or Schottky contact. The layer or layers forming an ohmic contact are connected together so as to constitute a first output terminal of the photovoltaic generator. The layer or layers forming a Schottky contact are connected together so as to constitute a second output terminal of the generator.