The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 1981

Filed:

Aug. 23, 1979
Applicant:
Inventor:

Karl Knauer, Kirchseeon, DE;

Assignee:

Siemens Aktiengesellschaft, Berlin and Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365149 ; 365174 ; 307303 ; 357 51 ;
Abstract

A dynamic element is disclosed which is constructed on a doped semiconductor substrate. A strip-shaped semiconductor region, which is on a surface of the substrate and which is doped opposite to the substrate, is designed as a first selection line, whereas a path which is separated by means of an insulating layer from the substrate, and which runs cross-wise to the strip-shaped region, represents a second selection line. The path is separated from a substrate region which lies next to the strip-shaped region by means of a thin film region of the insulating layer. In the case of memory elements of this type, simple construction and small dimensions are desired. According to the invention, this is achieved in that inside of the strip-shaped region, an island-shaped semiconductor region doped opposite to the strip-shaped region is arranged and which lies close to an interface of the strip-shaped region separating it from the semiconductor region which lies under the thin film region. The invention is useful in digital semiconductor memories of high bit density.


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