The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1981
Filed:
May. 02, 1978
Applicant:
Inventors:
Theodore F Ciszek, Salt Point, NY (US);
Guenter H Schwuttke, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566 / ; 156D / ;
Abstract
A method for growing silicon crystalline material by the directional solidification method without cracking the growth container. The container material must have an average thermal expansion coefficient of between about 3.0 to 4.3.times.10.sup.-6 .degree.C..sup.-1 between about 20.degree. and 650.degree. C. The molten silicon is provided in the container and solidified sequentially from the enclosed regions to the open region of the container to form the crack-free silicon crystalline material.