The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1980
Filed:
Jan. 26, 1979
Applicant:
Inventors:
Hirobumi Ouchi, Hitachi, JP;
Toji Mukai, Hitachi, JP;
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 15 ; 357 41 ;
Abstract
A photo-semiconductor device includes an active region of semiconductor material in which carriers contributing to a photocurrent are generated by the irradiation of incident light. On one surface of the active region is formed a main junction towards which those carriers move. In the active region is buried an additional region to form at the interface between the additional and active regions an additional junction which attracts a substantial portion of thermally generated carriers. The remaining portion of the thermally generated carriers is partially recombined internally and partially attracted to the main junction. Thus, dark current is reduced.