The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1980
Filed:
Nov. 08, 1979
Applicant:
Inventors:
Peter G Ang, Naperville, IL (US);
Anthony F Sammells, Naperville, IL (US);
Assignee:
Institute of Gas Technology, Chicago, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B / ; H01M / ; C25B / ;
U.S. Cl.
CPC ...
204 75 ; 204 / ; 204 72 ; 204 77 ; 204102 ; 204252 ; 204265 ; 204266 ; 204280 ; 204D / ; 429 13 ; 429 41 ; 429 44 ; 429 45 ; 429111 ;
Abstract
A gas diffusion semiconductor electrode and solar cell and a process for gaseous fixation, such as nitrogen photoreduction, CO.sub.2 photoreduction and fuel gas photo-oxidation. The gas diffusion photosensitive electrode has a central electrolyte-porous matrix with an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas.