The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1980
Filed:
May. 31, 1977
Joseph H Raymond, Jr, Katy, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An ion-implanted lightly-doped polycrystalline silicon strip in an N-channel silicon gate integrated circuit device functions as a resistor element which exhibits transistor action. The impedance of the resistor element changes in response to the voltage on an underlying polycrystalline silicon area which is insulated from the resistor element by a thin silicon oxide layer. This resistor element is used as a load in a static RAM cell array and lowers the power dissipation of the array; the resistance is high for stored zeros and low for stored logic ones.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile