Clock voltage generator for semiconductor memory with reduced power

Abstract

A clock generator for producing internal waveforms for an MOS dynamic RAM or the like provides a preselected delay period between input and output clocks. A pair-delay circuit including two transistor stages produces the desired delay, a driver circuit provides the necessary high level output. A pair of series transistors in the output of the pair-delay, with the node between the series transistors being precharged, provides precise control of the delay over a wide range. Power dissipation is reduced in the driver circuit by avoiding the possibility of d.c. current paths when the reset clock goes high.