The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1980
Filed:
Aug. 04, 1978
Akira Takanashi, Kokubunji, JP;
Kenzo Masuda, Tokorozawa, JP;
Hitachi, Ltd., , JP;
Abstract
A depletion type MISFET is connected between a power voltage supply line of a transistor logic circuit block and a power source voltage terminal. The gate electrode of the depletion type MISFET is connected to a reference voltage. The transistor logic circuit block has a driving MISFET and a load connected in series between the power voltage supply line and the reference voltage. The load of the transistor logic circuit is similarly constituted by a depletion type MISFET, while the driving MISFET is of enhancement type. The driving MISFET and the load MISFET in the transistor logic circuit block are built-in in a monolithic semiconductor integrated circuit, together with the MISFET for the power voltage supply to the transistor logic circuit. The drain of the power voltage supplying MISFET is connected to the power voltage supply terminal, and is made to have a high breakdown voltage structure so that the breakdown voltage between the drain and the substrate of the power voltage supplying MISFET may be larger than that of the load MISFET.