The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1980
Filed:
Jun. 22, 1979
Applicant:
Inventor:
Dieter H Pommerrenig, Burke, VA (US);
Assignees:
Hamamatsu Corporation, Middlesex, NJ (US);
Hamamatsu TV Co, Ltd., Hamamatsu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 16 ; 357 61 ;
Abstract
A method of producing semiconductor photodiodes of indium antimonide, by growing an indium antimonide epitaxial layer of one type conductivity onto a substrate of indium antimonide of another type conductivity, utilizing conventional vapor phase or liquid phase epitaxial techniques, wherein the antimony in the epitaxial layer is partially replaced by either arsenic or phosphorus, thus resulting in a high performing photoelectric device.