The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 1980
Filed:
Jul. 05, 1979
Alfred Y Cho, Summit, NJ (US);
James V DiLorenzo, Millington, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
A vertical field effect transistor (10) includes a relatively wide bandgap, lowly doped active layer (18) epitaxially grown on, and substantially lattice matched to, an underlying semiconductor body portion (13). A mesa (20) of lower bandgap material is epitaxially grown on and substantially lattice matched to the active layer. A source electrode (22) is formed on a bottom major surface (34) of the semiconductor body portion, a drain electrode (24) is formed on the top of the mesa, and a pair of gate electrode stripes (26) are formed on the active layer adjacent both sides of the mesa. When voltage (V.sub.G), negative with respect to the drain, is applied to the gate electrodes, the depletion regions (28) thereunder extend laterally in the active layer until they intersect, thereby pinching off the flow of current in the channel extending from the drain and source electrodes. Also described is an embodiment in which spaced-apart, high impedance zones (30) underlie the active layer and the mesas, and the spaces between zones underlie the gate stripes.