The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 1980
Filed:
Dec. 01, 1977
Applicant:
Inventors:
Tsutomu Okamoto, both of, Yokohama, JP;
Hidemasa Tamura, both of, Yokohama, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156624 ; 156D / ; 156D / ;
Abstract
A thin (less than 500.mu.m) epitaxial dielectric layer having low photoconductivity is grown on a monocrystalline wafer composed of Bi.sub.12 GeO.sub.20 by a liquid-phase epitaxial growth technique. The composition of the liquid melt from which the dielectric layer is grown is composed of a pseudo-three-component system defined by the formula: