The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 1980
Filed:
Mar. 02, 1979
Werner F Esseluhn, Wyomissing, PA (US);
Western Electric Company, Inc., New York, NY (US);
Abstract
In certain manufacturing operations materials are deposited onto semiconductor wafers. For example, in liquid-phase epitaxial melt deposition, wafers are exposed to a melt having constituents identical to the wafer material. In the past this has been accomplished by individually sliding the wafers into the melt and/or sliding portions of melt onto the wafers. This sliding creates a high amount of friction which in turns generates particles which can contaminate the melt. Also, this friction limits the number of wafers that can be simultaneously processed by sliding techniques. To avoid this a movable melt reservoir 62 is located above stacked stationary wafers 44. Prior to deposition, the melt 68 in the reservoir is separated from the wafers 44 by offsetting an aperture 64 in the bottom of the reservoir 62 from a passageway 58 leading to the wafers 44. The reservoir 62 is then moved to align the aperture 64 either partially or completely with the passageway 58 to give a controlled flow of the melt 48 to the wafers 44. Since the reservoir 62 only moves a short distance, the friction and particles are minimal. Also, by providing slots 74 in the top of the wafer pocket 57, a gas-phase doping can be combined with the liquid deposition.