The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1980
Filed:
May. 31, 1977
Joseph H Raymond, Jr, Katy, TX (US);
Jih-Chang Lien, Houston, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A double-level polycrystalline silicon structure for an N-channel MOS integrated circuit is disclosed including a metal interconnect level. Contact between the metal interconnect level and N+ diffused moat areas is made through discrete second-level polysilicon areas which reduce the step from metal level to moat level, thus increasing yields. Also, connections from the metal level to the first level polysilicon are made using a discrete area of second level polysilicon to minimize the step.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile