The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1980
Filed:
Dec. 04, 1978
Horst Meinders, Reutlingen, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
In a known process for manufacturing a semiconductor element, a single crystal semiconductor body is subjected to at least one high temperature treatment such as diffusion or epitaxy in order to create a pn junction. A metallization is then applied to the upper surface of the semiconductor to constitute an electrode. Thereafter the element is subjected to an annealing process at intermediate temperatures. In accordance with the invention, a semiconductor body is irradiated following the manufacture of the pn junctions and prior to the metallization. The radiation causes lattice displacements which in turn decrease the lifetime of the minority carriers. The above-mentioned annealing process then also serves partially to heal the lattice displacements caused by the radiation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile